fast recovery diode ARF664 for igbt,iegt,gct applications repetitive voltage up to 3300 v snubberless operation mean forward current 1000 a low losses soft recovery surge current 18 ka target specification gen 03 - issue : 1 symbol characteristic conditions tj [c] value unit blocking v rrm repetitive peak reverse voltage 125 3300 v v rsm non-repetitive peak reverse voltage 125 3400 v i rrm repetitive peak reverse current v=vrrm 125 ma v dc link permanent dc voltage 125 1500 v conducting i f (av) mean forward current 180 sin ,50 hz, th=55c, double side cooled 1000 a i f (av) mean forward current 180 square,50 hz,th=55c,double side cooled 1025 a i fsm surge forward current sine wave, 10 ms 125 18 ka i2 t i2 t reapplied reverse voltage up to 50% vrsm 1620 x1e3 a2s v fm forward voltage forward current = 1570 a 25 3.55 v v f(to) threshold voltage 125 1.80 v r f forward slope resistance 125 0.70 mohm switching q rr reverse recovery charge i f = 1000 a di/dt= 250 a/s 125 c i rr peak reverse recovery current vr = 100 v 125 a t rr reverse recovery time i f = 1100 a s q rr reverse recovery charge di/dt= 500 a/s 2000 c i rr peak reverse recovery current vr = v 125 1100 a s softness (s-factor), min e off turn off energy dissipation j v fr peak forward recovery di/dt= 500 a/s 125 v mounting r th(j-h) thermal impedance junction to heatsink, double side cooled 21 c/kw r th(c-h) thermal impedance case to heatsink, double side cooled 6 c/kw t j operating junction temperature 00 / 125 c f mounting force 22.0 / 24.5 kn mass 520 g ordering information : ARF664 s 33 standard specification vrrm/100 p oseico spa p ower semiconductors italian corporation p oseico poseico spa via n. lorenzi 8, 16152 genova - italy tel. +39 010 6556234 - fax +39 010 6557519 sales office: tel. +39 010 6556775 - fax +39 010 6442510
ARF664 fast recovery diode target specification gen 03 - issue : 1 distributed by forward characteristic tj = 125 c 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.7 1.7 2.7 3.7 4.7 forward voltage [v] forward current [a] transient thermal impedance double side cooled 0.0 5.0 10.0 15.0 20.0 25.0 0.001 0.01 0.1 1 10 100 t[s] zth j-h [c/kw] surge characteristic tj = 125 c 0 2 4 6 8 10 12 14 16 18 20 1 10 100 n cycles itsm [ka] a ll the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. in the interest of product improvement poseico spa reserves the right to change any data given in this data sheet at any time without previous notice. if not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. p oseico spa p ower semiconductors italian corporation p oseico
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